UF3N30 datasheet, mosfet equivalent, Unisonic Technologies

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Features and benefits

* RDS(ON)<2Ω @ VGS=10V, ID=3A * High switching speed * Typically 4nC low gate charge * 100% avalanche tested
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Description

The UTC UF3N30 is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance.
* FEATURES * RDS(ON)<2Ω @ VGS=10V, ID=3.

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